Si5853DC

Vishay Siliconix

Document Number: 71239

S-21251—Rev. B, 05-Aug-02

www.vishay.com

2-1

P-Channel 1.8-V (G-S) MOSFET With Schottky Diode

MOSFET PRODUCT SUMMARY

--3.6

--20

--3.0

--2.4

SCHOTTKY PRODUCT SUMMARY

Diode Forward Voltage

20

0.48 V @ 0.5 A

1.0

Bottom View

1206-8 ChipFETt

A

A

S

G

K

K

D

D

1

Marking Code

JA XX

Lot Traceability

and Date Code

Part # Code

K

A

S

G

D

P-Channel MOSFET

Ordering Information: Si5853DC-T1

Parameter

Symbol

5 sec

Steady State

Unit

Drain-Source Voltage (MOSFET and Schottky)

--20

Reverse Voltage (Schottky)

20

V

Gate-Source Voltage (MOSFET)

8

8

V

--3.6

--2.7

--2.6

--1.9

Pulsed Drain Current (MOSFET)

--10

A

--1.8

--0.9

A

Average Foward Current (Schottky)

1.0

Pulsed Foward Current (Schottky)

7

2.1

1.1

1.1

0.6

W

1.3

0.96

W

0.68

0.59

Operating Junction and Storage Temperature Range

--55 to 150

_

C

260

_

C

Notes

a.

Surface Mounted on 1” x1” FR4 Board.

b.

See Reliability Manual for profile. The ChipFET is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation

process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder intercon-

nection.

c.

Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.