VS-8CSH01HM3

www.vishay.com

Vishay Semiconductors

Revision: 28-Mar-17

1

Document Number: 95705

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

FEATURES

recovery

• 175 °C maximum operating junction temperature

• Specified for output and snubber operation

• Low forward voltage drop

• Low leakage current

• Meets MSL level 1, per J-STD-020, LF maximum

peak of 260 °C

• AEC-Q101 qualified, meets JESD 201 class 2 whisker test

• Material categorization: for definitions of compliance

DESCRIPTION / APPLICATIONS

State of the art hyperfast recovery rectifiers specifically

designed with optimized performance of forward voltage

drop and hyperfast recovery time.

The planar structure and the platinum doped life time control

guarantee the best overall performance, ruggedness, and

reliability characteristics.

These devices are intended for use in snubber, boost,

lighting, piezo-injection, as high frequency rectifiers, and

freewheeling diodes.

The extremely optimized stored charge and low recovery

current minimize the switching losses and reduce power

dissipation in the switching element.

PRODUCT SUMMARY

Package

SMPC (TO-277A)

2 x 4 A

100 V

0.72 V

25 ns

175 °C

Diode variation

Dual die

Anode 1

Anode 2

Cathode

K

SMPC (TO-277A)

K

2

1

ABSOLUTE MAXIMUM RATINGS

PARAMETER

SYMBOL

TEST CONDITIONS

VALUES

UNITS

Peak repetitive reverse voltage

100

V

Average rectified forward current

per device

8

A

per diode

4

Non-repetitive peak surge current

per device

130

per diode

70

Operating junction and storage temperatures

-65 to +175

°C

PARAMETER

SYMBOL

TEST CONDITIONS

MIN.

TYP.

MAX.

UNITS

Breakdown voltage,



blocking voltage

100

-

-

V

Forward voltage, per diode

-

0.89

0.95

-

0.72

0.78

Reverse leakage current, per diode

-

-

2

μA

-

4

80

Junction capacitance

-

18

-

pF