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2SC3356 Datasheet(PDF) 2 Page - Galaxy Semi-Conductor Holdings Limited |
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2SC3356 Datasheet(HTML) 2 Page - Galaxy Semi-Conductor Holdings Limited |
2 / 4 page Production specification Silicon Epitaxial Planar Transistor 2SC3356 C142 www.gmicroelec.com Rev.A 2 ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=10μA,IE=0 20 V Collector-emitter breakdown voltage V(BR)CEO IC=1mA,IB=0 12 V Emitter-base breakdown voltage V(BR)EBO IE=10μA,IC=0 3 V Collector cut-off current ICBO VCB=10V,IE=0 1 μA Emitter cut-off current IEBO VEB=1V,IC=0 1 μA DC current gain hFE VCE=10V,IC=20mA 50 120 300 Transition frequency fT VCE=10V,IC= 20mA 7 GHz Insertion power gain |S21e| 2 VCE=10V, IC= 20mA , f=1GHz 11.5 dB Feed-back capacitance Cre VCB=10V, IE=0,f=1MHz 0.55 1.0 pF Noise Figure NF VCE=10V,IC=7mA, f=1GHz 1.1 2.0 dB CLASSIFICATION OF hFE Rank Q R S Range 50-100 80-160 125-250 Marking R23 R24 R25 |
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