VS-VSKDS220/030

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Vishay Semiconductors

Revision: 29-Sep-15

2

Document Number: 94639

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ABSOLUTE MAXIMUM RATINGS

PARAMETER

SYMBOL

TEST CONDITIONS

VALUES

UNITS

Maximum average forward current

110

A

Maximum peak one cycle



non-repetitive surge current

5 µs sine or 3 µs rect. pulse

Following any rated

load condition and with

18 000

10 ms sine or 6 ms rect. pulse

2000

Non-repetitive avalanche energy

99

mJ

Repetitive avalanche current

Current decaying linearly to zero in 1 μs



22

A

ELECTRICAL SPECIFICATIONS

PARAMETER

SYMBOL

TEST CONDITIONS

VALUES

UNITS

Maximum forward voltage drop

110 A

0.59

V

220 A

0.78

110 A

0.57

220 A

0.82

Maximum reverse leakage current

10

mA

650

Maximum junction capacitance

7400

pF

Typical series inductance

Measured lead to lead 5 mm from package body

7.0

nH

Maximum voltage rate of change

dV/dt

10 000

V/µs

Maximum RMS insulation voltage

50 Hz

3000 (1 min)

3600 (1 s)

V

THERMAL - MECHANICAL SPECIFICATIONS

PARAMETER

SYMBOL

TEST CONDITIONS

VALUES

UNITS

Maximum junction and storage



temperature range

-55 to +150

°C

Maximum thermal resistance,



junction to case per leg

DC operation

0.52

°C/W

Typical thermal resistance,



case to heatsink per module

0.1

Approximate weight

75

g

2.7

oz.

Mounting torque ± 10 %

to heatsink

A mounting compound is recommended and the torque

should be rechecked after a period of 3 h to allow for the

spread of the compound.

4

Nm

busbar

3

Case style

TO-240AA compatible