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TMS4C2972 Datasheet(PDF) 11 Page - Texas Instruments

Part # TMS4C2972
Description  245760 BY 12-BIT FIELD MEMORY
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Manufacturer  TI [Texas Instruments]
Direct Link  http://www.ti.com
Logo TI - Texas Instruments

TMS4C2972 Datasheet(HTML) 11 Page - Texas Instruments

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TMS4C2972
245760 BY 12-BIT
FIELD MEMORY
SMGS671 – OCTOBER 1997
11
POST OFFICE BOX 1443
HOUSTON, TEXAS 77251–1443
output enable (OE)
OE is used to enable or disable output pins Q0 to Q11. A logic high on the OE input enables the output to
Q0–Q11, and a logic low disables the output. The internal read address pointer is incremented by cycling SRCK
regardless of OE logic level. The outputs will be clocked into the high-impedance (floating) state if OE is low
at the rising edge of SRCK. The disable time (tdis(CK)) applies. The outputs will be enabled if OE is high at the
rising edge of SRCK. The enable time (ten(CK)) applies. Note that OE setup and hold times are referenced to
the rising edge of SRCK.
Table 2. Read-Cycle State Table
SRCK RISING EDGE
RE
OE
Read-address pointer
Q0 – Q11
High
High
Address pointer increment
Output data
High
Low
Address pointer increment
Hi-Z
Low
High
Address pointer stop
Output data
Low
Low
Address pointer stop
Hi-Z
power up and initialization
When the device is powered up, it is not assured to function properly until at least 100
µs after VDD has stabilized
to a value within the range of recommended operating conditions. This time is defined as tPOWER-OK. To properly
initialize the device, the following operations must be performed after tPOWER-OK:
1.
A minimum of 96 dummy read operations (SRCK cycles)
2.
An RSTR operation
3.
A minimum of 96 dummy write operations (SWCK cycles)
4.
An RSTW operation
Dummy-read cycles/RSTR (operations 1 and 2) must be performed in sequence. Dummy-write cycles/RSTW
(3 and 4) also must be performed in sequence; however, the dummy-read cycles/RSTR and dummy-write
cycles/RSTW (that is, 1 and 2, 3 and 4) can occur simultaneously.
If the dummy-read and dummy-write operations start earlier than tPOWER-OK, an RSTR operation plus
operations 1 and 2 listed above and an RSTW operation plus 3 and 4 must be performed after tPOWER-OK.
old-/new-data access
There must be a minimum delay of 160 SWCK cycles between writing into memory and reading out from
memory. If reading of the first field starts, with an RSTR operation, before the start of writing the second field
(that is, before the next RSTW operation), then the data just written in will be read out.
The start of reading out the first field of data may be delayed past the beginning of writing in the second field
of data for as many as 39 SWCK cycles. If the RSTR operation for the first field read-out occurs less than
40 SWCK cycles after the RSTW operation for the second field write-in, then the internal buffering of the device
assures that the first field (= old data) will still be read out.
In order to read out new data (that is, the second field written in), the delay between RSTW operation and RSTR
operation must be at least 160 SWCK cycles. If the delay between RSTW and RSTR operations is more than
40 but less than 160 cycles, then the data read out will be undetermined, it may be old data or new data or a
combination of old and new data. Such a timing should be avoided.
The above is still valid if write and/or read random-block access mode is used; the 160 SWCK cycles latency
must be fulfilled by the user between any RSTW and RSTR related to the same block address.


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