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TMS4C2972 Datasheet(PDF) 11 Page - Texas Instruments |
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TMS4C2972 Datasheet(HTML) 11 Page - Texas Instruments |
11 / 26 page TMS4C2972 245760 BY 12-BIT FIELD MEMORY SMGS671 – OCTOBER 1997 11 POST OFFICE BOX 1443 • HOUSTON, TEXAS 77251–1443 output enable (OE) OE is used to enable or disable output pins Q0 to Q11. A logic high on the OE input enables the output to Q0–Q11, and a logic low disables the output. The internal read address pointer is incremented by cycling SRCK regardless of OE logic level. The outputs will be clocked into the high-impedance (floating) state if OE is low at the rising edge of SRCK. The disable time (tdis(CK)) applies. The outputs will be enabled if OE is high at the rising edge of SRCK. The enable time (ten(CK)) applies. Note that OE setup and hold times are referenced to the rising edge of SRCK. Table 2. Read-Cycle State Table SRCK RISING EDGE RE OE Read-address pointer Q0 – Q11 High High Address pointer increment Output data High Low Address pointer increment Hi-Z Low High Address pointer stop Output data Low Low Address pointer stop Hi-Z power up and initialization When the device is powered up, it is not assured to function properly until at least 100 µs after VDD has stabilized to a value within the range of recommended operating conditions. This time is defined as tPOWER-OK. To properly initialize the device, the following operations must be performed after tPOWER-OK: 1. A minimum of 96 dummy read operations (SRCK cycles) 2. An RSTR operation 3. A minimum of 96 dummy write operations (SWCK cycles) 4. An RSTW operation Dummy-read cycles/RSTR (operations 1 and 2) must be performed in sequence. Dummy-write cycles/RSTW (3 and 4) also must be performed in sequence; however, the dummy-read cycles/RSTR and dummy-write cycles/RSTW (that is, 1 and 2, 3 and 4) can occur simultaneously. If the dummy-read and dummy-write operations start earlier than tPOWER-OK, an RSTR operation plus operations 1 and 2 listed above and an RSTW operation plus 3 and 4 must be performed after tPOWER-OK. old-/new-data access There must be a minimum delay of 160 SWCK cycles between writing into memory and reading out from memory. If reading of the first field starts, with an RSTR operation, before the start of writing the second field (that is, before the next RSTW operation), then the data just written in will be read out. The start of reading out the first field of data may be delayed past the beginning of writing in the second field of data for as many as 39 SWCK cycles. If the RSTR operation for the first field read-out occurs less than 40 SWCK cycles after the RSTW operation for the second field write-in, then the internal buffering of the device assures that the first field (= old data) will still be read out. In order to read out new data (that is, the second field written in), the delay between RSTW operation and RSTR operation must be at least 160 SWCK cycles. If the delay between RSTW and RSTR operations is more than 40 but less than 160 cycles, then the data read out will be undetermined, it may be old data or new data or a combination of old and new data. Such a timing should be avoided. The above is still valid if write and/or read random-block access mode is used; the 160 SWCK cycles latency must be fulfilled by the user between any RSTW and RSTR related to the same block address. |
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