SI4386DY datasheet(4/8 Pages) VISHAY

Part #	SI4386DY

Description	N-Channel Reduced Qg, Fast Switching MOSFET

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Manufacturer	VISHAY [Vishay Siliconix]

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Document Number: 73109

S09-0226-Rev. D, 09-Feb-09

Vishay Siliconix

Si4386DY

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

Threshold Voltage

- 1.0

- 0.8

- 0.6

- 0.4

- 0.2

0.0

0.2

0.4

- 50

- 25

0

25

50

75

100

125

150

ID = 250 µA

TJ - Temperature (°C)

Single Pulse Power

0.01

0

1

50

20

30

10

600

0.1

Time (s)

10

40

100

Safe Operating Area, Junction-to-Case

100

1

0.1

1

10

100

0.01

10

1 ms

0.1

TC = 25 °C

Single Pulse

10 ms

100 ms

DC

1 s

10 s

VDS - Drain-to-Source Voltage (V)

* VGS

minimum VGS at which RDS(on) is specified

Limited by RDS(on)*

Normalized Thermal Transient Impedance, Junction-to-Ambient

10-3

10-2

1

10

600

10-1

10-4

100

2

1

0.1

0.01

0.2

0.1

0.05

0.02

Single Pulse

Duty Cycle = 0.5

Square Wave Pulse Duration (s)

1. Duty Cycle, D =

2. Per Unit Base = RthJA = 67 °C/W

3. TJM – TA = PDMZthJA(t)

t1

t2

t1

t2

Notes:

4. Surface Mounted

PDM

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