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SIHB28N60EF Datasheet(PDF) 2 Page - Vishay Siliconix |
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SIHB28N60EF Datasheet(HTML) 2 Page - Vishay Siliconix |
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2 / 9 page  SiHB28N60EF www.vishay.com Vishay Siliconix S17-0294-Rev. C, 27-Feb-17 2 Document Number: 91601 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Notes a. Coss(er) is a fixed capacitance that gives the same energy as Coss while VDS is rising from 0 % to 80 % VDS b. Coss(tr) is a fixed capacitance that gives the charging time as Coss while VDS is rising from 0 % to 80 % VDS THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYP. MAX. UNIT Maximum Junction-to-Ambient RthJA -62 °C/W Maximum Junction-to-Case (Drain) RthJC -0.5 SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = 250 μA 600 - - V VDS Temperature Coefficient V DS/TJ Reference to 25 °C, ID = 1 mA - 0.76 - V/°C Gate-Source Threshold Voltage (N) VGS(th) VDS = VGS, ID = 250 μA 2.0 - 4.0 V Gate-Source Leakage IGSS VGS = ± 20 V - - ± 100 nA VGS = ± 30 V - - ± 1 μA Zero Gate Voltage Drain Current IDSS VDS = 480 V, VGS = 0 V - - 1 μA VDS = 480 V, VGS = 0 V, TJ = 125 °C - - 2 mA Drain-Source On-State Resistance RDS(on) VGS = 10 V ID = 14 A - 0.107 0.123 Forward Transconductance gfs VDS = 30 V, ID = 14 A - 9.7 - S Dynamic Input Capacitance Ciss VGS = 0 V, VDS = 100 V, f = 1 MHz - 2714 - pF Output Capacitance Coss - 123 - Reverse Transfer Capacitance Crss -6 - Effective output capacitance, energy related a Co(er) VGS = 0 V, VDS = 0 V to 480 V -98 - Effective output capacitance, time related b Co(tr) - 356 - Total Gate Charge Qg VGS = 10 V ID = 14 A, VDS = 480 V - 80 120 nC Gate-Source Charge Qgs -17 - Gate-Drain Charge Qgd -33 - Turn-On Delay Time td(on) VDD = 480 V, ID = 14 A Rg = 9.1 , VGS = 10 V -24 48 ns Rise Time tr -40 80 Turn-Off Delay Time td(off) - 82 123 Fall Time tf -39 78 Gate Input Resistance Rg f = 1 MHz, open drain 0.2 0.5 1.0 Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS MOSFET symbol showing the integral reverse p - n junction diode -- 28 A Pulsed Diode Forward Current ISM -- 70 Diode Forward Voltage VSD TJ = 25 °C, IS = 11 A, VGS = 0 V - 0.9 1.2 V Reverse Recovery Time trr TJ = 25 °C, IF = IS = 14 A, dI/dt = 100 A/μs, VR = 400 V - 142 284 ns Reverse Recovery Charge Qrr - 0.97 1.94 μC Reverse Recovery Current IRRM - 13.2 - A S D G |
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