2SC4215 datasheet(2/3 Pages) BILIN

Part #	2SC4215

Description	NPN Silicon Epitaxial Planar Transistor

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Manufacturer	BILIN [Galaxy Semi-Conductor Holdings Limited]

Direct Link	http://www.galaxycn.com

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Production specification

NPN Silicon Epitaxial Planar Transistor

2SC4215

F041

www.gmicroelec.com

Rev.A

2

ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified

Parameter

Symbol

Test conditions

MIN

TYP

MAX

UNIT

Collector-base breakdown voltage

V(BR)CBO

IC=100μA,IE=0

40

V

Collector-emitter breakdown voltage

V(BR)CEO

IC=1mA,IB=0

30

V

Emitter-base breakdown voltage

V(BR)EBO

IE=100μA,IC=0

4

V

Collector cut-off current

ICBO

VCB=40V,IE=0

0.1

μA

Emitter cut-off current

IEBO

VEB=4V,IC=0

0.5

μA

DC current gain

hFE

VCE=6V,IC=1mA

40

200

Collector-base time constant

CC.rbb’

VCE=6V,IC=1mA

25

ps

Transition frequency

fT

VCE=6V, IE= 1mA

260

550

MHz

CLASSIFICANTION OF hFE

Marking

QR

QO

QY

hFE

40-80

70-140

100-200

TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified

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2SC4215 Datasheet(PDF) 2 Page - Galaxy Semi-Conductor Holdings Limited

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