IRF9Z30, SiHF9Z30

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Vishay Siliconix

S12-3048-Rev. A, 24-Dec-12

5

Document Number: 91459

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

Fig. 9 - Typical Capacitance vs. Drain-to-Source Voltage

Fig. 10 - Typical Gate Charge vs. Gate-to-Source Voltage

Fig. 11 - Typical On-Resistance vs. Drain Current

Fig. 12 - Maximum Drain Current vs. Case Temperature



C

iss

C

oss

C

rss

1

2

5

2

10

5

0

800

1200

1600

2000

400

V

C

C

C

20

16

12

8

0

4

I

V

For test circuit

see figure 17

10

020

30

40

50

80 μs Pulse Test

V

V

0

12

24

36

48

60

0.4

0.8

1.2

1.6

2.0

- I

0.0

25

150

125

100

75

50

SiHF9Z32

SiHF9Z30

0

4

8

12

16

20