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SI4178DY-T1-E3 Datasheet(PDF) 4 Page - Vishay Siliconix |
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SI4178DY-T1-E3 Datasheet(HTML) 4 Page - Vishay Siliconix |
4 / 9 page www.vishay.com 4 Document Number: 67906 S11-0653-Rev. A, 11-Apr-11 Vishay Siliconix Si4178DY-T1-E3 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Source-Drain Diode Forward Voltage Threshold Voltage 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 10 1 100 TJ = 25 °C TJ = 150 °C VSD - Source-to-Drain Voltage (V) 1.6 1.8 2.0 2.2 2.4 2.6 2.8 3.0 - 50 - 25 0 25 50 75 100 125 150 ID = 250 μA TJ - Temperature (°C) On-Resistance vs. Gate-to-Source Voltage Single Pulse Power 0.010 0.015 0.020 0.025 0.030 0.035 0.040 0.045 0.050 0 2 468 10 ID = 8.4 A; TJ = 25 °C ID =2A;TJ = 25 °C ID =2 A; TJ = 125 °C ID = 8.4 A; TJ = 125 °C VGS - Gate-to-Source Voltage (V) 0 5 10 15 20 25 30 Time (s) 10 1000 0.1 0.01 0.001 100 1 Safe Operating Area, Junction-to-Ambient 100 1 0.1 1 10 100 0.01 10 0.1 TA =25 °C Single Pulse 100 ms Limited by RDS(on)* BVDSS Limited 1ms 100 μs 10 ms 1s 10 s DC VDS - Drain-to-Source Voltage (V) *V GS > minimum VGS at which RDS(on) is specified |
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