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SI7121ADN Datasheet(PDF) 5 Page - Vishay Siliconix |
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SI7121ADN Datasheet(HTML) 5 Page - Vishay Siliconix |
5 / 13 page Si7121ADN www.vishay.com Vishay Siliconix S13-2638-Rev. A, 30-Dec-13 5 Document Number: 62930 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Safe Operating Area, Junction-to-Ambient Current Derating* Power, Junction-to-Case * The power dissipation PD is based on TJ(max.) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. 0.01 0.1 1 10 100 0.1 1 10 100 V DS - Drain-to-Source Voltage (V) * V GS > minimum VGS at which RDS(on) is specified 100 ms Limited by RDS(on)* 1 ms T A = 25 °C Single Pulse BVDSS Limited 10 ms 100 μs 1 s DC 10 s Limited by I DM 0 10 20 30 40 0 25 50 75 100 125 150 T C - Case Temperature (°C) 0 7 14 21 28 35 0 25 50 75 100 125 150 T C - Case Temperature (°C) |
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