SI7302DN datasheet(2/7 Pages) VISHAY

Part #	SI7302DN

Description	N-Channel 220-V (D-S) MOSFET

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Document Number: 73306

S-83051-Rev. D, 29-Dec-08

Vishay Siliconix

Si7302DN

Notes:

a. Pulse test; pulse width

≤ 300 µs, duty cycle ≤ 2 %.

b. Guaranteed by design, not subject to production testing.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation

of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum

rating conditions for extended periods may affect device reliability.

SPECIFICATIONS TJ = 25 °C, unless otherwise noted

Parameter

Symbol

Test Conditions

Min.

Typ.

Max.

Unit

Static

Drain-Source Breakdown Voltage

VDS

VGS = 0 V, ID = 250 µA

220

V

VDS Temperature Coefficient

ΔV

DS/TJ

ID = 250 µA

240

mV/°C

VGS(th) Temperature Coefficient

ΔV

GS(th)/TJ

7.7

Gate-Source Threshold Voltage

VGS(th)

VDS = VGS, ID = 250 µA

24

V

Gate-Source Leakage

IGSS

VDS = 0 V, VGS = 20 VGS

100

nA

Zero Gate Voltage Drain Current

IDSS

VDS = 220 V, VGS = 0 V

1

µA

VDS = 220 V, VGS = 0 V, TJ = 55 °C

10

On-State Drain Currenta

ID(on)

VDS ≥ 5 V, VGS = 10 V

10

A

Drain-Source On-State Resistancea

RDS(on)

VGS = 10 V, ID = 2.3 A

0.260

0.320

Ω

VGS = 6 V, ID = 2.2 A

0.280

0.340

Forward Transconductancea

gfs

VDS = 15 V, ID = 2.3 A

11

S

Dynamicb

Input Capacitance

Ciss

VDS = 15 V, VGS = 0 V, f = 1 MHz

645

pF

Output Capacitance

Coss

72

Reverse Transfer Capacitance

Crss

47

Total Gate Charge

Qg

VDS = 110 V, VGS = 10 V, ID = 2.3 A

14

21

VDS = 110 V, VGS = 6 V, ID = 2.3 A

9.1

14

nC

Gate-Source Charge

Qgs

2.8

Gate-Drain Charge

Qgd

4.2

Gate Resistance

Rg

VGS = 0.1 mV, f = 1 MHz

0.9

1.8

2.7

Ω

Turn-On Delay Time

td(on)

VDD = 110 V, RL = 110 Ω

ID ≅ 1 A, VGEN = 4.5 V, Rg = 6 Ω

10

15

ns

Rise Time

tr

10

15

Turn-Off Delay Time

td(off)

20

30

Fall Time

tf

15

25

Drain-Source Body Diode Characteristics TC = 25 °C, unless otherwise noted

Continuous Source-Drain Diode Current

IS

8.4

A

Pulse Diode Forward Current

ISM

10

Body Diode Voltage

VSD

IS = 3.2 A, VGS = 0 V

0.8

1.2

V

Body Diode Reverse Recovery Time

trr

IF = 3.2 A, dI/dt = 100 A/µs, TJ = 25 °C

65

100

ns

Body Diode Reverse Recovery Charge

Qrr

163

250

nC

Reverse Recovery Fall Time

ta

45

ns

Reverse Recovery Rise Time

tb

20

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