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SI7302DN Datasheet(PDF) 2 Page - Vishay Siliconix |
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SI7302DN Datasheet(HTML) 2 Page - Vishay Siliconix |
2 / 7 page www.vishay.com 2 Document Number: 73306 S-83051-Rev. D, 29-Dec-08 Vishay Siliconix Si7302DN Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = 250 µA 220 V VDS Temperature Coefficient ΔV DS/TJ ID = 250 µA 240 mV/°C VGS(th) Temperature Coefficient ΔV GS(th)/TJ 7.7 Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250 µA 24 V Gate-Source Leakage IGSS VDS = 0 V, VGS = 20 VGS 100 nA Zero Gate Voltage Drain Current IDSS VDS = 220 V, VGS = 0 V 1 µA VDS = 220 V, VGS = 0 V, TJ = 55 °C 10 On-State Drain Currenta ID(on) VDS ≥ 5 V, VGS = 10 V 10 A Drain-Source On-State Resistancea RDS(on) VGS = 10 V, ID = 2.3 A 0.260 0.320 Ω VGS = 6 V, ID = 2.2 A 0.280 0.340 Forward Transconductancea gfs VDS = 15 V, ID = 2.3 A 11 S Dynamicb Input Capacitance Ciss VDS = 15 V, VGS = 0 V, f = 1 MHz 645 pF Output Capacitance Coss 72 Reverse Transfer Capacitance Crss 47 Total Gate Charge Qg VDS = 110 V, VGS = 10 V, ID = 2.3 A 14 21 VDS = 110 V, VGS = 6 V, ID = 2.3 A 9.1 14 nC Gate-Source Charge Qgs 2.8 Gate-Drain Charge Qgd 4.2 Gate Resistance Rg VGS = 0.1 mV, f = 1 MHz 0.9 1.8 2.7 Ω Turn-On Delay Time td(on) VDD = 110 V, RL = 110 Ω ID ≅ 1 A, VGEN = 4.5 V, Rg = 6 Ω 10 15 ns Rise Time tr 10 15 Turn-Off Delay Time td(off) 20 30 Fall Time tf 15 25 Drain-Source Body Diode Characteristics TC = 25 °C, unless otherwise noted Continuous Source-Drain Diode Current IS 8.4 A Pulse Diode Forward Current ISM 10 Body Diode Voltage VSD IS = 3.2 A, VGS = 0 V 0.8 1.2 V Body Diode Reverse Recovery Time trr IF = 3.2 A, dI/dt = 100 A/µs, TJ = 25 °C 65 100 ns Body Diode Reverse Recovery Charge Qrr 163 250 nC Reverse Recovery Fall Time ta 45 ns Reverse Recovery Rise Time tb 20 |
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