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SI8461DB Datasheet(PDF) 1 Page - Vishay Siliconix |
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SI8461DB Datasheet(HTML) 1 Page - Vishay Siliconix |
1 / 8 page Si8461DB www.vishay.com Vishay Siliconix S15-1510-Rev. C, 29-Jun-15 1 Document Number: 65001 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 P-Channel 20 V (D-S) MOSFET Marking Code: xxxx = 8461 xxx = Date / lot traceability code Ordering Information: Si8461DB-T2-E1 (lead (Pb)-free and halogen-free) FEATURES • TrenchFET® power MOSFET • Ultra small 1 mm x 1 mm maximum outline • Ultra-thin 0.548 mm maximum height • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS •Load switch • Battery switch • Charger switch Notes a. Surface mounted on 1" x 1" FR4 board with full copper, t = 10 s. b. Surface mounted on 1" x 1" FR4 board with minimum copper, t = 10 s. c. Refer to IPC/JEDEC® (J-STD-020), no manual or hand soldering. d. In this document, any reference to case represents the body of the MICRO FOOT device and foot is the bump. e. Based on TA = 25 °C. f. Surface mounted on 1" x 1" FR4 board with full copper. g. Maximum under steady state conditions is 100 °C/W. h. Surface mounted on 1" x 1" FR4 board with minimum copper. i. Maximum under steady state conditions is 190 °C/W. PRODUCT SUMMARY VDS (V) RDS(on) ( Ω)ID (A) a, e Qg (TYP.) -20 0.100 at VGS = -4.5 V -3.7 9.5 nC 0.118 at VGS = -2.5 V -3.4 0.140 at VGS = -1.8 V -3.1 0.205 at VGS = -1.5 V -2 MICRO FOOT® 1 x 1 Bump Side View 1 G 4 D S 3 S 2 Backside View 1 1 mm xxxx xxx S G D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage VDS -20 V Gate-Source Voltage VGS ± 8 Continuous Drain Current (TJ = 150 °C) TA = 25 °C ID -3.7 a A TA = 70 °C -3 a TA = 25 °C -2.5 b TA = 70 °C -1.9 b Pulsed Drain Current IDM -20 Continuous Source-Drain Diode Current TC = 25 °C IS -1.5 a TA = 25 °C -0.65 b Maximum Power Dissipation TA = 25 °C PD 1.8 a W TA = 70 °C 1.1 a TA = 25 °C 0.78 b TA = 70 °C 0.5 b Operating Junction and Storage Temperature Range TJ, Tstg -55 to +150 °C Package Reflow Conditions c VPR 260 IR/Convection 260 THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYPICAL MAXIMUM UNIT Maximum Junction-to-Ambient f, g t = 10 s RthJA 55 70 °C/W Maximum Junction-to-Ambient h, i t = 10 s 125 160 |
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