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SI8473EDB Datasheet(PDF) 5 Page - Vishay Siliconix |
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SI8473EDB Datasheet(HTML) 5 Page - Vishay Siliconix |
5 / 12 page Si8473EDB www.vishay.com Vishay Siliconix S15-1692-Rev. D, 20-Jul-15 5 Document Number: 65037 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Source-Drain Diode Forward Voltage Threshold Voltage On-Resistance vs. Gate-to-Source Voltage Single Pulse Power, Junction-to-Ambient Safe Operating Area, Junction-to-Ambient 0.1 1 10 100 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 TJ = 150 °C VSD - Source-to-Drain Voltage (V) TJ = 25 °C 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 - 50 - 25 0 25 50 75 100 125 150 TJ - Temperature (°C) ID =250 µA 0.00 0.02 0.04 0.06 0.08 0.10 0.12 0 1234 5 VGS - Gate-to-Source Voltage (V) TJ = 25 °C TJ = 125 °C 0.001 0 40 80 60 110 Time (s) 20 0.01 0.1 100 600 VDS - Drain-to-Source Voltage (V) *VGS > minimum VGS at which RDS(on) is specified 100 1 0.1 1 10 100 0.01 10 0.1 TA = 25 °C Single Pulse 10 ms 100 ms DC Limited by RDS(on)* BVDSS Limited 1ms 10 s 1s |
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