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2SD1306 Datasheet(PDF) 2 Page - Hitachi Semiconductor |
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2SD1306 Datasheet(HTML) 2 Page - Hitachi Semiconductor |
2 / 5 page 2SD1306 2 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Collector to base voltage V CBO 30 V Collector to emitter voltage V CEO 15 V Emitter to base voltage V EBO 5V Collector current I C 0.7 A Collector power dissipation P C 150 mW Junction temperature Tj 150 °C Storage temperature Tstg –55 to +150 °C Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions Collector to base breakdown voltage V (BR)CBO 30 — — V I C = 10 µA, IE = 0 Collector to emitter breakdown voltage V (BR)CEO 15 — — V I C = 1 mA, RBE = ∞ Emitter to base breakdown voltage V (BR)EBO 5— — V I E = 10 µA, IC = 0 Collector cutoff current I CBO — — 1.0 µAV CB = 20 V, IE = 0 DC current transfer ratio h FE* 1 250 — 800 V CE = 1 V, IC = 150 mA* 2 Base to emitter voltage V BE — — 1.0 V V CE = 1 V, IC = 150 mA* 2 Collector to emitter saturation voltage V CE(sat) — — 0.5 V I C = 500 mA, IB = 50 mA* 2 Gain bandwidth product f T — 250 — MHz V CE = 1 V, IC = 150 mA* 2 Notes: 1. The 2SD1306 is grouped by h FE as follows. 2. Pulse test Grade D E Mark ND NE h FE 250 to 500 400 to 800 See characteristic curves of 2SD1504. |
Similar Part No. - 2SD1306 |
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Similar Description - 2SD1306 |
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