SI7138DP datasheet(4/7 Pages) VISHAY

Part #	SI7138DP

Description	N-Channel 60 V (D-S) Reduced Qgd, Fast Switching MOSFET

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Manufacturer	VISHAY [Vishay Siliconix]

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Document Number: 73530

S11-0212-Rev. C, 14-Feb-11

Vishay Siliconix

Si7138DP

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

Source-Drain Diode Forward Voltage

Threshold Voltage

0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2

1

VSD - Source-to-Drain Voltage (V)

10

100

TJ = 25 °C

TJ = 150 °C

1.2

1.7

2.2

2.7

3.2

3.7

- 50

- 25

0

25

50

75

100

125

150

ID = 250 µA

TJ - Temperature (°C)

On-Resistance vs. Gate-to-Source Voltage

Single Pulse Power, Junction-to-Ambient

456789

10

VGS - Gate-to-Source Voltage (V)

TJ = 125 °C

ID = 19.7 A

TJ = 25 °C

0.005

0.010

0.015

0.020

1000

Time (s)

1

0.1

0.001

10

100

0.01

0

20

40

60

80

100

Safe Operating Area, Junction-to-Ambient

100

1

0.1

1

10

100

0.01

10

0.1

TA = 25 °C

Single Pulse

VDS - Drain-to-Source Voltage (V)

* VGS > minimum VGS at which RDS(on) is specified

1 ms

10 ms

100 ms

1 s

10 s

100 µs

DC

Limited by RDS(on)*

BVDSS limited

ID(on) limited

IDM limited

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