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SIHH11N65E Datasheet(PDF) 2 Page - Vishay Siliconix |
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SIHH11N65E Datasheet(HTML) 2 Page - Vishay Siliconix |
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2 / 9 page  SiHH11N65E www.vishay.com Vishay Siliconix S16-0524-Rev. A, 21-Mar-16 2 Document Number: 91586 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Notes a. Coss(er) is a fixed capacitance that gives the same energy as Coss while VDS is rising from 0 % to 80 % VDS. b. Coss(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 % to 80 % VDS. THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYP. MAX. UNIT Maximum Junction-to-Ambient RthJA 42 55 °C/W Maximum Junction-to-Case (Drain) RthJC 0.72 0.96 SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = 250 μA 650 - - V VDS Temperature Coefficient V DS/TJ Reference to 25 °C, ID = 1 mA - 0.77 - V/°C Gate-Source Threshold Voltage (N) VGS(th) VDS = VGS, ID = 250 μA 2 - 4 V Gate-Source Leakage IGSS VGS = ± 20 V - - ± 100 nA VGS = ± 30 V - - ± 1 μA Zero Gate Voltage Drain Current IDSS VDS = 650 V, VGS = 0 V - - 1 μA VDS = 520 V, VGS = 0 V, TJ = 125 °C - - 50 Drain-Source On-State Resistance RDS(on) VGS = 10 V ID = 6 A - 0.316 0.363 Forward Transconductance gfs VDS = 30 V, ID = 6 A - 4.1 - S Dynamic Input Capacitance Ciss VGS = 0 V, VDS = 100 V, f = 1 MHz - 1257 - pF Output Capacitance Coss -60 - Reverse Transfer Capacitance Crss -4 - Effective Output Capacitance, Energy Related a Co(er) VDS = 0 V to 520 V, VGS = 0 V -43 - Effective Output Capacitance, Time Related b Co(tr) - 168 - Total Gate Charge Qg VGS = 10 V ID = 6 A, VDS = 520 V -34 68 nC Gate-Source Charge Qgs -9 - Gate-Drain Charge Qgd -15 - Turn-On Delay Time td(on) VDD = 520 V, ID = 6 A, VGS = 10 V, Rg = 9.1 -19 38 ns Rise Time tr -28 56 Turn-Off Delay Time td(off) -39 78 Fall Time tf -23 46 Gate Input Resistance Rg f = 1 MHz, open drain 0.3 0.7 1.4 Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS MOSFET symbol showing the integral reverse p - n junction diode -- 12 A Pulsed Diode Forward Current ISM -- 27 Diode Forward Voltage VSD TJ = 25 °C, IS = 6 A, VGS = 0 V - 0.9 1.2 V Reverse Recovery Time trr TJ = 25 °C, IF = IS = 6 A, dI/dt = 100 A/μs, VR = 25 V - 321 642 ns Reverse Recovery Charge Qrr -3.8 7.6 μC Reverse Recovery Current IRRM -19 - A S D G |
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