GaN RF Power Products

Next generation high power RF semiconductor technology

1

Power Efficiency “>2GHz”

Power Density

Easy Matching

Supply Chain

Cost

Linearity

LDMOS

MACOM GaN on Silicon

Benefits

>10% Improvement

4-6 W/mm

easy

6

"and 8"

Silicon

DPD friendly

Lower Operating Costs, Simpler Cooling

Smaller Footprint and Lower Costs

Time-to-Market and Smaller Footprint

Capacity and Surge Capability

Competitive Bill of Materials

Competitive Bill of Materials

–

1-1.5 W/mm

difficult

Silicon

DPD friendly

8"

Support all ISM Brands

Can be used at >2.45 GHz

Broader Choice for Your Applications

Limited to 2.45 GHz

MACOM continues to develop industry-leading gallium nitride (GaN) RF power products. Our product portfolio

leverages MACOM’s more than 60-year heritage of providing best-in-class standard, application specific and

custom solutions for our radar, EW, ISM, and communications customers.

As a member of the RF Energy Alliance, MACOM brings GaN technology into mainstream

applications such as RF ignition systems, solid-state cooking, and high-lumen plasma lighting.

MACOM GaN products are offered as unmatched transistors, internally matched power transistors, and fully

matched power pallets and modules. Using high performance GaN HEMT processes and leveraging our

proprietary die layout and assembly techniques, these products exhibit robust thermal properties and excellent

RF performance with respect to power, gain, gain-flatness, efficiency, and ruggedness for applications up to 6 GHz.

MACOM’s industry-leading portfolio of cost-effective RF power products uses our unique GaN on Silicon technology

to deliver the cost, bandwidth, power density, and efficiency advantages of GaN in a variety of form factors—

including 2 W to 600 W P1db CW power transistors in ceramic and overmolded plastic DFN and TO-272 packages,

as well as HF through S-band modules and 50 Ω matched pallets. Our GaN on Silicon transistors and amplifiers

improve upon the high power and efficiency performance of LDMOS while at the at the same time providing

the high frequency performance of GaAs. Only MACOM delivers GaN performance at silicon cost structures

to drive adoption.

Why choose GaN?

GaN advantages include:

> High breakdown voltage

> Multi-octave bandwidth

> Superior power density

> High frequency operation

> High RF gain and efficiency

> Excellent thermal conductivity

> GaN performance at silicon cost structures

For over 45 years, MACOM engineers have been redefining RF power and are now applying their

GaN expertise to an array of commercial, industrial, scientific, medical and wireless applications.

Turn to MACOM for superior performance, high power GaN solutions.

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