SI4038DY datasheet(1/10 Pages) VISHAY

Part #	SI4038DY

Description	N-Channel 40 V (D-S) MOSFET

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Vishay Siliconix

Si4038DY

Document Number: 62904

S13-2180-Rev. A, 14-Oct-13

www.vishay.com

1

This document is subject to change without notice.

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

For technical questions, contact: pmostechsupport@vishay.com

N-Channel 40 V (D-S) MOSFET

FEATURES

•TrenchFET® Power MOSFET

•

100 % Rg and UIS Tested

•

Material categorization:

For definitions of compliance please see

www.vishay.com/doc?99912

APPLICATIONS

•

Synchronous Rectification

•

DC/DC Converters

•

DC/AC Inverters

•

Industrial

Notes:

a. Based on TC = 25 °C.

b. Surface mounted on 1" x 1" FR4 board.

c. t = 10 s.

d. Maximum under steady state conditions is 80 °C/W.

PRODUCT SUMMARY

VDS (V)

RDS(on) () Max.

ID (A)

a

Qg (Typ.)

40

0.0024 at VGS = 10 V

42.5

28 nC

0.0032 at VGS = 4.5 V

36.8

SO-8

SD

GD

5

6

7

8

Top View

2

3

4

1

Ordering Information:

Si4038DY-T1-GE3 (Lead (Pb)-free and Halogen-free)

N-Channel MOSFET

G

D

S

ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)

Parameter

Symbol

Limit

Unit

Drain-Source Voltage

VDS

40

V

Gate-Source Voltage

VGS

± 20

Continuous Drain Current (TJ = 150 °C)

TC = 25 °C

ID

42.5

A

TC = 70 °C

34

TA = 25 °C

28.4b, c

TA = 70 °C

22.4b, c

Pulsed Drain Current (t = 100 µs)

IDM

150

Continuous Source-Drain Diode Current

TC = 25 °C

IS

7

TA = 25 °C

3.1b, c

Single Pulse Avalanche Current

L = 0.1 mH

IAS

40

Avalanche Energy

EAS

80

mJ

Maximum Power Dissipation

TC = 25 °C

PD

7.8

W

TC = 70 °C

5

TA = 25 °C

3.5b, c

TA = 70 °C

2.2b, c

Operating Junction and Storage Temperature Range

TJ, Tstg

- 55 to 150

°C

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Typical

Maximum

Unit

Maximum Junction-to-Ambientb, d

t

 10 s

RthJA

29

35

°C/W

Maximum Junction-to-Foot (Drain)

Steady State

RthJF

13

16

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