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SI4170DY Datasheet(PDF) 3 Page - Vishay Siliconix |
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SI4170DY Datasheet(HTML) 3 Page - Vishay Siliconix |
3 / 7 page Document Number: 68396 S-81054-Rev. A, 12-May-08 www.vishay.com 3 Vishay Siliconix Si4170DY New Product TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Output Characteristics On-Resistance vs. Drain Current and Gate Voltage Gate Charge 0 14 28 42 56 70 0 1234 5 VDS - Drain-to-Source Voltage (V) VGS =10thru 4 V VGS =3 V 0.0020 0.0024 0.0028 0.0032 0.0036 0.0040 014 28 42 56 70 ID - Drain Current (A) VGS =4.5 V VGS =10 V 0 2 4 6 8 10 014 28 42 56 70 ID =20A Qg - Total Gate Charge (nC) VDS =20 V VDS =15 V VDS =10 V Transfer Characteristics Capacitance On-Resistance vs. Junction Temperature 0 1 2 3 4 5 0 1234 5 VGS - Gate-to-Source Voltage (V) TC = 125 °C TC = 25 °C TC = - 55 °C Crss 0 1100 2200 3300 4400 5500 0 6 12 18 24 30 Ciss VDS - Drain-to-Source Voltage (V) Coss 0.7 0.9 1.1 1.3 1.5 1.7 - 50 - 25 0 25 50 75 100 125 150 TJ -Junction Temperature (°C) VGS =10 V ID =15A VGS =4.5 V |
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