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BTS781GP Datasheet(PDF) 1 Page - Infineon Technologies AG

Part # BTS781GP
Description  TrilithIC
Download  17 Pages
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Manufacturer  INFINEON [Infineon Technologies AG]
Direct Link  http://www.infineon.com
Logo INFINEON - Infineon Technologies AG

BTS781GP Datasheet(HTML) 1 Page - Infineon Technologies AG

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P-TO263-15-1
Data Sheet
1
2002-06-28
TrilithIC
Data Sheet
BTS 781 GP
1Overview
1.1
Features
• Quad D-MOS switch
• Free configurable as bridge or quad-switch
• Optimized for DC motor management applications
•Low
R
DS ON: 26 m
Ω high-side switch, 14 mΩ low-side
switch (typical values @ 25
°C)
• Maximum peak current: typ. 42 A @ 25
°C=
• Very low quiescent current: typ. 4
µA @ 25 °C=
• Small outline, thermal optimized PowerPak
• Load and GND-short-circuit-protection
• Operates up to 40 V
• Status flag for over temperature
• Open load detection in Off-mode
• Overtemperature shut down with hysteresis
• Internal clamp diodes
• Isolated sources for external current sensing
• Under-voltage detection with hysteresis
1.2
Description
The BTS 781 GP is part of the TrilithIC
family containing three dies in one package:
One double high-side switch and two low-side switches. The drains of these three
vertical DMOS chips are mounted on separated leadframes. The sources are connected
to individual pins, so the BTS 781 GP can be used in H-bridge- as well as in any other
configuration. The double high-side is manufactured in SMART SIPMOS® technology
which combines low
R
DS ON vertical DMOS power stages with CMOS control circuit. The
high-side switch is fully protected and contains the control and diagnosis circuit. To
achieve low
R
DS ON
and fast switching performance, the low-side switches are
manufactured in S-FET 2 logic level technology. The equivalent standard product is the
SPD30N06S2L-13.
Type
Ordering Code
Package
BTS 781 GP
Q67006-A9526
P-TO263-15-1


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