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MTB9D0N10RE3 Datasheet(PDF) 1 Page - Cystech Electonics Corp. |
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MTB9D0N10RE3 Datasheet(HTML) 1 Page - Cystech Electonics Corp. |
1 / 8 page CYStech Electronics Corp. Spec. No. : C169E3 Issued Date : 2017.02.14 Revised Date : 2017.04.05 Page No. : 1/ 8 MTB9D0N10RE3 CYStek Product Specification N-Channel Enhancement Mode Power MOSFET MTB9D0N10RE3 BVDSS 100V ID@VGS=10V, TC=25°C 72A ID@VGS=10V, TA=25°C Features 10.9A RDS(ON)@VGS=10V, ID=20A • Low On Resistance • Simple Drive Requirement • Low Gate Charge • Fast Switching Characteristic • RoHS compliant package Symbol Outline Ordering Information MTB9D0N10RE3 TO-220 Device Package Shipping MTB9D0N10RE3-0-UB-X TO-220 (RoHS compliant) 50 pcs/tube, 20 tubes/box, 4 boxes / carton G:Gate D:Drain S:Source 6.7 mΩ(typ) Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products G D S Packing spec, UB : 50 pcs / tube, 20 tubes/box Product rank, zero for no rank products Product name |
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