HFB1N70F

700V N-Channel MOSFET

Oct 2016

Parameter

Value

Unit

700

V

1A

10

3.7

nC

Key Parameters

Features

unless otherwise specified

Symbol

Parameter

Value

Unit

V

DSS

Drain-Source Voltage

700

V

I

D

Drain Current

– Continuous (T

)

1.0 *

A

Drain Current

– Continuous (T

)

0.6 *

A

I

DM

Drain Current

– Pulsed

(Note 1)

4.0 *

A

V

GS

Gate-Source Voltage

30

V

E

AS

Single Pulsed Avalanche Energy

(Note 2)

21

mJ

I

AR

Avalanche Current

(Note 1)

1.0

A

E

AR

Repetitive Avalanche Energy

(Note 1)

0.3

mJ

dv/dt

Peak Diode Recovery dv/dt

(Note 3)

4.5

V/ns

P

D

Power Dissipation (T

)

0.9

W

Power Dissipation (T

)

- Derate above 25

2.5

W

0.02

W/

T

Operating and Storage Temperature Range

-55 to +150

T

L

Maximum lead temperature for soldering purposes,

1/8” from case for 5 seconds

300

Symbol

Parameter

Value

Unit

R

JL

Thermal Resistance, Junction-to-Lead, Max.

50

/W

R

JA

Thermal Resistance, Junction-to-Ambient, Max.

140

/W

Thermal Resistance Characteristics

TO-92

Symbol

G

D

S

* Drain current limited by maximum junction temperature

Originative New Design

Very Low Intrinsic Capacitances

Excellent Switching Characteristics

100% Avalanche Tested

RoHS Compliant