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KTA1298 Datasheet(PDF) 2 Page - Galaxy Semi-Conductor Holdings Limited |
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KTA1298 Datasheet(HTML) 2 Page - Galaxy Semi-Conductor Holdings Limited |
2 / 4 page Production specification Silicon Epitaxial Planar Transistor KTA1298 C095 www.gmicroelec.com Rev.B 2 ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=-1mA,IE=0 -35 V Collector-emitter breakdown voltage V(BR)CEO IC=-10mA,IB=0 -30 V Emitter-base breakdown voltage V(BR)EBO IE=-1mA,IC=0 -5 V Collector cut-off current ICBO VCB=-30V,IE=0 -0.1 μA Emitter cut-off current IEBO VEB=-5V,IC=0 -0.1 μA DC current gain hFE(1) hFE(2) VCE=-1V,IC=-100mA VCE=-1V,IC=-800mA 100 40 320 Collector-emitter saturation voltage VCE(sat) IC=-500mA, IB=-20mA -0.4 V Base-emitter voltage VBE VCE=-1V,IC=-10mA -0.5 -0.8 V Transition frequency fT VCE=-5V, IC=-10mA 120 MHz Collector output capacitance Cob VCB=-10V,IE=0,f=1MHz 13 pF CLASSIFICATION OF hFE(1) Rank O Y Range 100-200 160-320 |
Similar Part No. - KTA1298_13 |
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Similar Description - KTA1298_13 |
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