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BCX69 Datasheet(PDF) 2 Page - Galaxy Semi-Conductor Holdings Limited |
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BCX69 Datasheet(HTML) 2 Page - Galaxy Semi-Conductor Holdings Limited |
2 / 4 page Production specification PNP Silicon AF Transistors BCX69 E068 www.gmicroelec.com Rev.A 2 ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified Parameter Symbol Test conditions MIN MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=-10μA IE=0 -25 V Collector-emitter breakdown voltage V(BR)CEO IC=-30mA IB=0 -20 V Emitter-base breakdown voltage V(BR)EBO IE=-1μA IC=0 -5 μV Collector cut-off current ICBO VCB=-25V IE=0 VCB=-25V IE=0,TA=150℃ -100 -100 nA μA VCE=-10V IC=-5mA 50 VCE=-1V IC=-500mA BCX69 BCX69-10 BCX69-16 BCX69-25 85 85 100 160 375 160 250 375 DC current gain hFE VCE=-1V IC=-1A 60 Collector-emitter saturation voltage VCE(sat) IC=-1A IB=-100mA -0.5 V Base-emitter voltage VBE IC=-1A ,VCE=-1V -1 V Transition frequency fT VCE=-5V, IC=-100mA, f=20MHz 100 MHz TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified |
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