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AS4C1M16S-6TIN Datasheet(PDF) 9 Page - Alliance Semiconductor Corporation |
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AS4C1M16S-6TIN Datasheet(HTML) 9 Page - Alliance Semiconductor Corporation |
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9 / 54 page  AS4C1M16S-C&I Confidential 8 Rev. 2.0 March /2015 CLK COMMAND T0 T1 T2 T3 T4 T5 T6 READ A NOP NOP NOP NOP NOP NOP NOP T7 T8 NOP CAS# Latency=2 tCK2, DQ CAS# Latency=3 tCK3, DQ DOUT A0 DOUT A1 DOUT A2 DOUT A3 DOUT A0 DOUT A1 DOUT A2 DOUT A3 Figure 4. Burst Read Operation (Burst Length = 4, CAS# Latency = 2, 3) The read data appears on the DQs subject to the values on the LDQM/UDQM inputs two clocks earlier (i.e. LDQM/UDQM latency is two clocks for output buffers). A read burst without the auto precharge function may be interrupted by a subsequent Read or Write command to the same bank or the other active bank before the end of the burst length. It may be interrupted by a BankPrecharge/ PrechargeAll command to the same bank too. The interrupt coming from the Read command can occur on any clock cycle following a previous Read command (refer to the following figure). CLK COMMAND T0 T1 T2 T3 T4 T5 T6 READ A READ B NOP NOP NOP NOP NOP NOP T7 T8 NOP CAS# Latency=2 tCK2, DQ CAS# Latency=3 tCK3, DQ DOUT A0 DOUT B0 DOUT B1 DOUT B2 DOUT A0 DOUT B0 DOUT B1 DOUT B2 DOUT B3 DOUT B3 Figure 5. Read Interrupted by a Read (Burst Length = 4, CAS# Latency = 2, 3) The LDQM/UDQM inputs are used to avoid I/O contention on the DQ pins when the interrupt comes from a Write command. The LDQM/UDQM must be asserted (HIGH) at least two clocks prior to the Write command to suppress data-out on the DQ pins. To guarantee the DQ pins against I/O contention, a single cycle with high-impedance on the DQ pins must occur between the last read data and the Write command (refer to the following three figures). If the data output of the burst read occurs at the second clock of the burst write, the LDQM/UDQM must be asserted (HIGH) at least one clock prior to the Write command to avoid internal bus contention. CLK COMMAND T0 T1 T2 T3 T4 T5 T6 NOP NOP Bank A Activate NOP NOP READ A WRITE A NOP T7 T8 NOP CAS# Latency=2 tCK2, DQ DQM T9 NOP DIN A0 DIN A1 DIN A2 DIN A3 Figure 6. Read to Write Interval (Burst Length 4, CAS# Latency = 2) |
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