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2SC4548 Datasheet(PDF) 1 Page - Galaxy Semi-Conductor Holdings Limited |
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2SC4548 Datasheet(HTML) 1 Page - Galaxy Semi-Conductor Holdings Limited |
1 / 4 page Production specification NPN Epitaxial Planar Silicon Transistor 2SC4548 E055 www.gmicroelec.com Rev.A 1 FEATURES High breakdown voltage. Adoption of MBIT process. Excellent hFE linearlity. SOT-89 ORDERING INFORMATION Type No. Marking Package Code 2SC4548 CN SOT-89 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value Units VCBO Collector-Base Voltage 400 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 5 V IC Collector Current 200 mA ICP Collector Current(Pulse) 400 mA PC Collector Dissipation 0.5 1.3 Note1 W Tj,Tstg Junction and Storage Temperature -55 to +150 ℃ Note1:Mounted on ceramic substrate(250mm2*0.8mm) Pb Lead-free |
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