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2SC3650 Datasheet(PDF) 2 Page - Galaxy Semi-Conductor Holdings Limited |
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2SC3650 Datasheet(HTML) 2 Page - Galaxy Semi-Conductor Holdings Limited |
2 / 3 page Production specification High hFE,Low-Frequency General-Purpose Amplifier Applications 2SC3650 E053 www.gmicroelec.com Rev.A 2 ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=10uA,IE=0 30 V Collector-emitter breakdown voltage V(BR)CEO IC=1mA,IB=0 25 V Emitter-base breakdown voltage V(BR)EBO IE=10uA,IC=0 15 V Collector cut-off current ICBO VCB=20V,IE=0 0.1 μA Emitter cut-off current IEBO VEB=10V,IC=0 0.1 μA VCE=5V,IC=500mA 800 1500 3200 DC current gain hFE VCE=5V,IC=10mA 600 Collector-emitter saturation voltage VCE(sat) IC=0.5A, IB=0.01A 0.12 0.5 V Base-emitter saturation voltage VBE(sat) IC=0.5A, IB=0.01A 0.85 1.2 V Transition frequency fT VCE=10V,Ic=50mA 220 MHz Collector output capacitance Cob VCB=10V,IE=0,f=1MHz 17 pF TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified |
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