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BQ771803DPJR Datasheet(PDF) 6 Page - Texas Instruments |
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BQ771803DPJR Datasheet(HTML) 6 Page - Texas Instruments |
6 / 28 page 6 bq7718 SLUSAX1E – DECEMBER 2012 – REVISED MARCH 2017 www.ti.com Product Folder Links: bq7718 Submit Documentation Feedback Copyright © 2012–2017, Texas Instruments Incorporated (1) Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is not implied. Exposure to absolute-maximum–rated conditions for extended periods may affect device reliability. 7 Specifications 7.1 Absolute Maximum Ratings Over-operating free-air temperature range (unless otherwise noted) (1) MIN MAX UNIT Supply voltage range VDD–VSS –0.3 30 V Input voltage range V5–VSS or V4–VSS or V3–VSS or V2–VSS or V1–VSS –0.3 30 V Output voltage range OUT–VSS –0.3 30 V Continuous total power dissipation, PTOT See Thermal Information Functional temperature –40 110 °C Storage temperature range, TSTG –65 150 °C (1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process. (2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process. 7.2 ESD Ratings VALUE UNIT V(ESD) Rating Electrostatic discharge Human body model (HBM) ESD stress voltage(1) ±2000 V Charged device model (CDM) ESD stress voltage(2) ±500 (1) See Systems Examples. 7.3 Recommended Operating Conditions Over-operating free-air temperature range (unless otherwise noted) MIN MAX UNIT Supply voltage, VDD (1) 3 25 V Input voltage range V5–V4 or V4–V3 or V3–V2 or V2–V1 or V1–VSS 0 5 V Operating ambient temperature range, TA –40 110 °C (1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report. 7.4 Thermal Information THERMAL METRIC(1) bq7718xy UNIT DPJ (WSON) 8 PINS RθJA Junction-to-ambient thermal resistance 56.6 °C/W RθJCtop Junction-to-case(top) thermal resistance 56.4 °C/W RθJB Junction-to-board thermal resistance 30.6 °C/W ψJT Junction-to-top characterization parameter 1.0 °C/W ψJB Junction-to-board characterization parameter 37.8 °C/W RθJCbot Junction-to-case(bottom) thermal resistance 11.3 °C/W |
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