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ISL43485IB-T Datasheet(PDF) 10 Page - Intersil Corporation |
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ISL43485IB-T Datasheet(HTML) 10 Page - Intersil Corporation |
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10 / 11 page  10 Die Characteristics SUBSTRATE POTENTIAL (POWERED UP): GND TRANSISTOR COUNT: 528 PROCESS: Si Gate BiCMOS FIGURE 12. DRIVER PROPAGATION DELAY vs TEMPERATURE FIGURE 13. DRIVER SKEW vs TEMPERATURE FIGURE 14. DRIVER AND RECEIVER WAVEFORMS, LOW TO HIGH FIGURE 15. DRIVER AND RECEIVER WAVEFORMS, HIGH TO LOW Typical Performance Curves VCC = 3.3V, TA = 25°C; Unless Otherwise Specified (Continued) -40 0 50 85 TEMPERATURE (°C) -25 25 75 8 9 10 11 12 13 14 15 16 tPHLY tPHLZ tPLHZ tPHLY tPLHY RDIFF = 54Ω -40 0 50 85 TEMPERATURE (°C) -25 25 75 0.5 1 1.5 2 2.5 3 3.5 4 |tPLHY - tPHLZ| |tPHLY - tPLHZ| |CROSSING PT. OF Y ↑ & Z↓ - CROSSING PT. OF Y ↓ & Z↑| RDIFF = 54Ω FIGURE 2A TIME (10ns/DIV) RDIFF = 54Ω, CL = 15pF 0 5 0 5 DI RO 0 0.5 1 1.5 2 2.5 3 B/Z A/Y TIME (10ns/DIV) RDIFF = 54Ω, CL = 15pF 0 5 0 5 DI RO 0 0.5 1 1.5 2 2.5 3 A/Y B/Z ISL43485 |
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