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2SA1213 Datasheet(PDF) 1 Page - Galaxy Semi-Conductor Holdings Limited |
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2SA1213 Datasheet(HTML) 1 Page - Galaxy Semi-Conductor Holdings Limited |
1 / 4 page Production specification Silicon Planar Epitaxial Transistor 2SA1213 E040 www.gmicroelec.com Rev.A 1 FEATURES Low saturation voltage High speed switching time Small flat package PC=1.0 to 2.0W(mounted on ceramic substrate) Complementary to 2SC2873 SOT-89 ORDERING INFORMATION Type No. Marking Package Code 2SA1213 NO/NY SOT-89 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value Units VCBO Collector-Base Voltage -50 V VCEO Collector-Emitter Voltage -50 V VEBO Emitter-Base Voltage -5 V IC Collector Current -2 A IB Base Current -0.4 A PC Collector Dissipation 500 1000(Note1) mW Tj,Tstg Junction and Storage Temperature -55 to +150 ℃ Note1:Mounted on ceramic substrate(250mm2*0.8t) Pb Lead-free |
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