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AP3440ABN122 Datasheet(PDF) 5 Page - Asahi Kasei Microsystems |
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AP3440ABN122 Datasheet(HTML) 5 Page - Asahi Kasei Microsystems |
5 / 17 page [AP3440] 016008997-E-00 2016/10 - 5 - 7. Absolute Maximum Ratings Parameter Symbol Min. Max. Unit Voltage between PGND1~4 and VIN, PVIN1~4 or SW1~6 Vterm1 -0.3 +6.0 V Voltage between SGND and FSIN, EN, SS, CC, TEST1~3, PG, FSO, VO1 or VO2 Vterm2 -0.3 +6.0 V Voltage between SGND and PGND1~4 Vterm3 -0.3 +0.3 V Voltage between VIN and PVIN1~4 Vterm4 -0.3 +0.3 V Storage Ambient Temperature Range Tstg -40 150 °C Junction Temperature Tj -40 150 °C Power Dissipation (Note 1) Ta=25°C Pd parallel 11.767 W Note 1 . Junction to Ambient Thermal Resistance θ JA = 39.7°C/W Junction to Case Thermal Resistance θ JC = 0.93°C /W Parallel Thermal Resistance (θ JA: 25%, θ JC: 75%) θ (JA+JC) = 10.63°C /W Ambient temperature of 25 °C using JEDEC 4L board. (114.3mm × 76.2mm) Figure 4. Power Dissipation WARNING: Operation at or beyond these limits may result in permanent damage to the device. Normal operation is not guaranteed at these extremes. 0 2 4 6 8 10 12 14 -50 -25 0 25 50 75 100 125 150 OPERATING AMBIENT TEMPERATURE Ta [℃] 125℃ 2.353W 25℃ 11.767W |
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