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AP3440ABN122 Datasheet(PDF) 7 Page - Asahi Kasei Microsystems |
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AP3440ABN122 Datasheet(HTML) 7 Page - Asahi Kasei Microsystems |
7 / 17 page [AP3440] 016008997-E-00 2016/10 - 7 - 9. Electrical Characteristics (VIN=5.05V, Tj=-40 °C~150°C, unless otherwise specified) Parameter Symbol Min Typ Max Unit Condition Output Voltage Accuracy (Note 5) Vout 1.205 1.227 1.251 V VIN Pin Current (in operation) Isupply - - 3 mA VIN Shut-down Current Ishd1 - - 1 uA Tj=25 °C PVIN Shut-down Current Ishd2 - - 1 uA Tj=25 °C Over Current Protection Threshold OCL 5.5 7.85 10.2 A Coil Peak Current Over Voltage Protection Threshold OVP 126 134 142 % Vout ratio Oscillation Frequency Freq 1950 2100 2250 kHz Soft Start Charging Current Iss 24 30 36 uA Soft Start Finishing Threshold Vss 1.11 1.17 1.23 V Soft Start Time Tss 2.1 3.9 6.7 ms Css=0.1uF High-side Minimum On-pulse SWUMINon - - 85 ns Low-side Minimum On-pulse SWLMINon - - 132 ns High-side On-resistance of Internal Switching MOSFET RDSONH - 91 139 mΩ Include Cu wire resistor Low-side On-resistance of Internal Switching MOSFET RDSONL - 41 69 mΩ Include Cu wire resistor Under Voltage Lock Out Threshold(UVLO) VD 3.8 3.95 4.1 V Output Voltage Monitoring Threshold (H) (Note 5) PWGDH 1.259 1.280 1.301 V Output Voltage Monitoring Threshold (L) (Note 5) PWGDL 1.153 1.172 1.191 V PG_BAD Detection Time TRESET1 1 - 4.7 us PG_GOOD Detection Time TRESET2 8 10 12 ms PG Output MOSFET On-resistance RMOSON - - 50 Ω Drain Current =20mA EN Pin Pull-down Resistance REN 60 100 140 kΩ EN Pin Input Voltage “H” (Note 2) VSHDNH 2.0 - 5.5 V EN Pin Input Voltage “L” (Note 2) VSHDNL 0 - 0.4 V MOSFET On-resistance for EN Off Output Discharge RMOSON - - 200 Ω Discharging Current = 10mA Line Regulation (Note 3) ΔVline - - 0.685 %/V Vin=4.7~5.4V Load Regulation (Note 3) ΔVload - - 0.3 % Io=0.1~3.5A Load Transient Response (Note 3) Io=2 ↔3.5A Slew rate= 0.2A/us Overshoot VtranO - - 36.8 mV Undershoot VtranU - - 37.3 mV Thermal Protection Threshold (Note 2, Note 4) Ttsd 155 175 200 °C Thermal Protection Hysteresis (Note 2, Note 4) TSDhys 1 25 50 °C FSIN Pin Pull-down Resistance RFSIN 350 500 650 kΩ FSIN Pin Input Voltage “H” (Note 2) VSHDNH 2.0 5.5 V FSIN Pin Input Voltage “L” (Note 2) VSHDNL 0 0.4 V Note 2. Guaranteed by design. Note 3. A reference value with the recommended circuit. Note 4. This function is to protect the IC from an overheat situation. Functional operation of the device including its reliability is not guaranteed under the condition that the overheat status beyond the specifications continues. Note 5. There is no overlap between Output Voltage and Output Voltage Monitoring since these values are interlocked by tracking. |
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