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BAT30F4 Datasheet(PDF) 3 Page - STMicroelectronics |
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BAT30F4 Datasheet(HTML) 3 Page - STMicroelectronics |
3 / 10 page DocID025780 Rev 5 3/10 BAT30F4 Characteristics 10 Figure 7. Continuous forward current versus ambient temperature Table 5. Dynamic characteristics Symbol Parameter Test conditions Min. Typ. Max. Unit C Diode capacitance VR = 1 V, F = 1 MHz - 10 14 pF Figure 3. Reverse leakage current versus reverse applied voltage (typical values) Figure 4. Forward voltage drop versus forward current (typical values) 1.E-01 1.E+00 1.E+01 1.E+02 1.E+03 0 5 10 15 20 25 30 IR(µA) VR(V) Tj = 85°C Tj = 25°C Figure 5. Relative variation of reverse leakage current versus junction temperature Figure 6. Junction capacitance versus reverse applied voltage (typical values) 1.E-02 1.E-01 1.E+00 1.E+01 1.E+02 -30 -20 -10 0 1020304050 60708090 IR[Tj] / IR[Tj = 25 °C] Tj(°C) 1 10 1 10 100 F = 1 MHz V OSC = 30 mV RMS Tj = 25°C VR(V) C(pF) |
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