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STBR6012-Y Datasheet(PDF) 2 Page - STMicroelectronics |
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STBR6012-Y Datasheet(HTML) 2 Page - STMicroelectronics |
2 / 8 page Characteristics STBR6012-Y 2/8 DocID029942 Rev 1 1 Characteristics Table 2: Absolute ratings (limiting values at 25 °C, unless otherwise specified) Symbol Parameter Value Unit VRSM Non-repetitive surge reverse voltage 1500 V VRRM Repetitive peak reverse voltage Tj = -40 °C to +175 °C 1200 V IF(RMS) Forward rms current 90 A IF(AV) Average forward current TC = 135 °C, δ = 0.5 square wave 60 A IFSM Surge non repetitive forward current tp = 10 ms sinusoidal 500 A Tstg Storage temperature range -65 to +175 °C Tj Operating junction temperature range -40 to +175 °C Table 3: Thermal parameters Symbol Parameter Max. value Unit Rth(j-c) Junction to case 0.45 °C/W Table 4: Static electrical characteristics Symbol Parameter Test conditions Min. Typ. Max. Unit IR(1) Reverse leakage current Tj = 25 °C VR = VRRM - 5 µA Tj = 150 °C - 25 250 VF(2) Forward voltage drop Tj = 25 °C IF = 60 A - 1.05 1.3 V Tj = 150 °C - 0.95 1.2 Notes: (1)Pulse test: tp = 5 ms, δ < 2% (2)Pulse test: tp = 380 µs, δ < 2% To evaluate the conduction losses, use the following equation: P = 0.96 x IF(AV) + 0.004 x IF2(RMS) |
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