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P405K Datasheet(PDF) 3 Page - International Rectifier |
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P405K Datasheet(HTML) 3 Page - International Rectifier |
3 / 7 page P400 Series 3 Bulletin I2776 rev. E 04/99 www.irf.com dv/dt Maximum critical rate of rise of off-state voltage I RRM Max. peak reverse and off-state I DRM leakage current at V RRM, VDRM I RRM Max peak reverse leakage current 100 µA T J = 25°C 50Hz, circuit to base, all terminal shorted, T J = 25°C, t = 1s Blocking Parameter P400 Units Conditions 200 V/µs T J = 125°C, exponential to 0.67 V DRM gate open 10 mA T J = 125°C, gate open circuit V INS RMS isolation voltage 2500 V P GM Maximum peak gate power 8 P G(AV) Maximum average gate power 2 I GM Maximum peak gate current 2 A - V GM Maximum peak negative gate voltage V GT Maximum gate voltage required 3 T J = - 40°C to trigger 2 T J = 25°C Anode Supply = 6V resistive load 1TJ = 125°C I GD Maximum gate current 90 T J = - 40°C required to trigger 60 mA T J = 25°C Anode Supply = 6V resistive load 35 T J = 125°C V GD Maximum gate voltage that will not trigger I GD Maximum gate current that will not trigger Parameter P400 Units Conditions 10 Triggering W V 0.2 V TJ = 125°C, rated VDRM applied 2mA TJ = 125°C, rated VDRM applied T J Max. operating temperature range -40 to 125 T stg Max. storage temperature range -40 to 125 R thJC Max. thermal resistance, 1.05 K/W DC operation per junction junction to case R thCS Max. thermal resistance, 0.10 K/W Mounting surface, smooth and greased case to heatsink T Mounting torque, base to heatsink 4 Nm wt Approximate weight 58 (2.0) g (oz) Parameter P400 Units Conditions Thermal and Mechanical Specification °C A mounting compound is recommended and the torque should be checked after a period of 3 hours to allow for the spread of the compound |
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