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STD6N60M2 Datasheet(PDF) 1 Page - STMicroelectronics |
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STD6N60M2 Datasheet(HTML) 1 Page - STMicroelectronics |
1 / 21 page This is information on a product in full production. May 2016 DocID024772 Rev 3 1/21 STB6N60M2, STD6N60M2 N-channel 600 V, 1.06 Ω typ., 4.5 A MDmesh™ M2 Power MOSFETs in D2PAK and DPAK packages Datasheet - production data Figure 1. Internal schematic diagram Features • Extremely low gate charge • Excellent output capacitance (Coss) profile • 100% avalanche tested • Zener-protected Applications • Switching applications Description These devices are N-channel Power MOSFETs developed using MDmesh™ M2 technology. Thanks to their strip layout and improved vertical structure, the devices exhibit low on-resistance and optimized switching characteristics, rendering them suitable for the most demanding high efficiency converters. 1 3 TAB DPAK D PAK 2 1 3 TAB AM15572v1 , TAB Order code VDS @ TJmax RDS(on) max ID STB6N60M2 650 V 1.2 Ω 4.5 A STD6N60M2 Table 1. Device summary Order code Marking Package Packing STB6N60M2 6N60M2 D2PAK Tape and reel STD6N60M2 DPAK www.st.com |
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