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STP6N80K5 Datasheet(PDF) 3 Page - STMicroelectronics

Part # STP6N80K5
Description  Zener-protected
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STP6N80K5 Datasheet(HTML) 3 Page - STMicroelectronics

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DocID024661 Rev 3
3/26
STB6N80K5, STD6N80K5, STI6N80K5, STP6N80K5
Electrical ratings
26
1
Electrical ratings
Table 2. Absolute maximum ratings
Symbol
Parameter
Value
Unit
VGS
Gate- source voltage
30
V
ID
Drain current (continuous) at TC = 25 °C
4.5
A
ID
Drain current (continuous) at TC = 100 °C
2.8
A
IDM
(1)
1.
Pulse width limited by safe operating area.
Drain current (pulsed)
18
A
PTOT
Total dissipation at TC = 25 °C
85
W
IAR
Max current during repetitive or single pulse
avalanche (pulse width limited by Tjmax )
1.5
A
EAS
Single pulse avalanche energy
(starting TJ = 25 °C, ID = IAS, VDD = 50 V)
85
mJ
dv/dt (2)
2.
ISD ≤ 4.5 A, di/dt ≤ 100 A/µs, peak VDS ≤ V(BR)DSS
Peak diode recovery voltage slope
4.5
V/ns
Tj
Tstg
Operating junction temperature
Storage temperature
-55 to 150
°C
Table 3. Thermal data
Symbol
Parameter
Value
Unit
D2PAK
DPAK
I2PAK
TO-220
Rthj-case
Thermal resistance junction-case
1.47
°C/W
Rthj-amb
Thermal resistance junction-amb
62.50
62.50
Rthj-pcb
(1)
1.
When mounted on FR-4 board of 1 inch², 2 oz Cu
Thermal resistance junction-pcb
30
50


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