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STB28N60M2 Datasheet(PDF) 4 Page - STMicroelectronics |
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STB28N60M2 Datasheet(HTML) 4 Page - STMicroelectronics |
4 / 21 page Electrical characteristics STB28N60M2, STI28N60M2, STP28N60M2, STW28N60M2 4/21 DocID025254 Rev 4 2 Electrical characteristics TC = 25 °C unless otherwise specified. Table 5: On/off states Symbol Parameter Test conditions Min. Typ. Max. Unit V(BR)DSS Drain-source breakdown voltage VGS = 0 V, ID = 1 mA 600 V IDSS Zero gate voltage drain current VGS = 0 V, VDS = 600 V 1 µA VGS = 0 V, VDS = 600 V, TC = 125 °C(1) 100 µA IGSS Gate-body leakage current VDS = 0 V, VGS = ±25 V ±10 µA VGS(th) Gate threshold voltage VDS = VGS, ID = 250 µA 2 3 4 V RDS(on) Static drain-source on-resistance VGS = 10 V, ID = 11 A 0.135 0.150 Ω Notes: (1) Defined by design, not subject to production test. Table 6: Dynamic Symbol Parameter Test conditions Min. Typ. Max. Unit Ciss Input capacitance VDS= 100 V, f = 1 MHz, VGS = 0 V - 1440 - pF Coss Output capacitance - 70 - pF Crss Reverse transfer capacitance - 2 - pF Coss eq.(1) Equivalent output capacitance VDS = 0 to 480 V, VGS = 0 V - 104 - pF RG Intrinsic gate resistance f = 1 MHz open drain - 5.5 - Ω Qg Total gate charge VDD = 480 V, ID = 22 A, VGS = 0 to 10 V (see Figure 17: "Test circuit for gate charge behavior") - 36 - nC Qgs Gate-source charge - 7.2 - nC Qgd Gate-drain charge - 16 - nC Notes: (1)Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80 % VDSS. Table 7: Switching times Symbol Parameter Test conditions Min. Typ. Max. Unit td(on) Turn-on delay time VDD = 300 V, ID = 11 A, RG = 4.7 Ω, VGS = 10 V (see Figure 16: "Test circuit for resistive load switching times" and Figure 21: "Switching time waveform" ) - 14.5 - ns tr Rise time - 7.2 - ns td(off) Turn-off-delay time - 100 - ns tf Fall time - 8 - ns |
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