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STB28N65M2 Datasheet(PDF) 4 Page - STMicroelectronics |
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STB28N65M2 Datasheet(HTML) 4 Page - STMicroelectronics |
4 / 22 page Electrical characteristics STB28N65M2, STF28N65M2, STP28N65M2, STW28N65M2 4/22 DocID027256 Rev 1 2 Electrical characteristics (TC = 25 °C unless otherwise specified) Table 5. On /off states Symbol Parameter Test conditions Min. Typ. Max. Unit V(BR)DSS Drain-source breakdown voltage VGS = 0, ID = 1 mA 650 V IDSS Zero gate voltage drain current VGS = 0, VDS = 650 V 1 µA VGS = 0, VDS = 650 V TC = 125 °C 100 µA IGSS Gate-body leakage current VDS = 0, VGS = ± 25 V ±10 µA VGS(th) Gate threshold voltage VDS = VGS, ID = 250 µA 2 3 4 V RDS(on) Static drain-source on-resistance VGS = 10 V, ID = 10 A 0.15 0.18 Ω Table 6. Dynamic Symbol Parameter Test conditions Min. Typ. Max. Unit Ciss Input capacitance VDS = 100 V, f = 1 MHz, VGS = 0 - 1440 - pF Coss Output capacitance - 60 - pF Crss Reverse transfer capacitance -2- pF Coss eq (1) 1. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS Equivalent output capacitance VGS = 0, VDS = 0 to 520 V - 307 - pF RG Intrinsic gate resistance f = 1 MHz open drain - 4.9 - Ω Qg Total gate charge VDD = 520 V, ID = 20 A, VGS = 10 V (see Figure 19) -35 - nC Qgs Gate-source charge - 6 - nC Qgd Gate-drain charge - 15 - nC Table 7. Switching times Symbol Parameter Test conditions Min. Typ. Max. Unit td(on) Turn-on delay time VDD = 325 V, ID = 10 A, RG = 4.7 Ω, VGS = 10 V (see Figure 18 and Figure 23) -13.4 - ns tr Rise time - 10 - ns td(off) Turn-off delay time - 59 - ns tf Fall time - 8.8 - ns |
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