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STB28NM60ND Datasheet(PDF) 8 Page - STMicroelectronics |
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STB28NM60ND Datasheet(HTML) 8 Page - STMicroelectronics |
8 / 22 page Electrical characteristics STB28NM60ND, STF28NM60ND, STP28NM60ND, STW28NM60ND 8/22 DocID024520 Rev 3 Figure 14. Normalized gate threshold voltage vs temperature Figure 15. Normalized on-resistance vs temperature Figure 16. Source-drain diode forward characteristics Figure 17. Normalized VDS vs temperature VGS(th) 1.00 0.90 0.80 0.70 -50 0 TJ(°C) (norm) -25 1.10 75 25 50 100 ID=250µA AM16047v1 RDS(on) 1.9 1.3 0.9 0.5 -50 0 TJ(°C) (norm) -25 75 25 50 100 0.7 1.1 1.5 1.7 2.1 ID=11.5A VGS=10V AM16048v1 VSD 0 8 ISD(A) (V) 4 12 16 0 0.2 0.4 0.6 0.8 1 TJ=-50°C TJ=150°C TJ=25°C 20 1.4 1.2 AM16050v1 VDS -50 0 TJ(°C) (norm) -25 75 25 50 100 0.92 0.94 0.96 0.98 1.00 1.02 1.04 1.06 ID=1mA 1.08 1.10 AM16049v1 |
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