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STD1HN60K3 Datasheet(PDF) 4 Page - STMicroelectronics

Part # STD1HN60K3
Description  N-channel 600 V, 6.7typ., 1.2 A SuperMESH3??Power MOSFET in DPAK and IPAK packages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STD1HN60K3 Datasheet(HTML) 4 Page - STMicroelectronics

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Electrical characteristics
STD1HN60K3, STU1HN60K3
4/19
DocID024422 Rev 1
2
Electrical characteristics
(Tcase =25 °C unless otherwise specified)
Table 4. On /off states
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
V(BR)DSS
Drain-source
breakdown voltage
ID = 1 mA, VGS = 0
600
V
IDSS
Zero gate voltage
drain current (VGS = 0)
VDS = 600 V
VDS = 600 V, TC=125 °C
1
50
µA
µA
IGSS
Gate-body leakage
current (VDS = 0)
VGS = ± 20 V
±10
µA
VGS(th)
Gate threshold voltage VDS = VGS, ID = 50 µA
2
3.75
4.5
V
RDS(on)
Static drain-source on-
resistance
VGS = 10 V, ID = 0.6 A
6.7
8
Ω
Table 5. Dynamic
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
Ciss
Input capacitance
VDS = 50 V, f = 1 MHz,
VGS = 0
-140
-
pF
Coss
Output capacitance
-
13
-
pF
Crss
Reverse transfer
capacitance
-2
-
pF
Co(tr)
(1)
1.
Co(tr) is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS
increases from 0 to 80% VDS
Equivalent
capacitance time
related
VDS = 0 to 480 V, VGS = 0
-9
-
pF
Co(tr)
(2)
2.
Co(tr) is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS
increases from 0 to 80% VDS
Equivalent
capacitance energy
related
-6
-
pF
Rg
Gate input resistance
f=1 MHz open drain
-
10
-
Ω
Qg
Total gate charge
VDD = 480 V, ID = 1.2 A,
VGS = 10 V
(see Figure 16)
-9.5
-
nC
Qgs
Gate-source charge
-
1.5
-
nC
Qgd
Gate-drain charge
-
6.5
-
nC


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