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STD1HN60K3 Datasheet(PDF) 4 Page - STMicroelectronics |
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STD1HN60K3 Datasheet(HTML) 4 Page - STMicroelectronics |
4 / 19 page Electrical characteristics STD1HN60K3, STU1HN60K3 4/19 DocID024422 Rev 1 2 Electrical characteristics (Tcase =25 °C unless otherwise specified) Table 4. On /off states Symbol Parameter Test conditions Min. Typ. Max. Unit V(BR)DSS Drain-source breakdown voltage ID = 1 mA, VGS = 0 600 V IDSS Zero gate voltage drain current (VGS = 0) VDS = 600 V VDS = 600 V, TC=125 °C 1 50 µA µA IGSS Gate-body leakage current (VDS = 0) VGS = ± 20 V ±10 µA VGS(th) Gate threshold voltage VDS = VGS, ID = 50 µA 2 3.75 4.5 V RDS(on) Static drain-source on- resistance VGS = 10 V, ID = 0.6 A 6.7 8 Ω Table 5. Dynamic Symbol Parameter Test conditions Min. Typ. Max. Unit Ciss Input capacitance VDS = 50 V, f = 1 MHz, VGS = 0 -140 - pF Coss Output capacitance - 13 - pF Crss Reverse transfer capacitance -2 - pF Co(tr) (1) 1. Co(tr) is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDS Equivalent capacitance time related VDS = 0 to 480 V, VGS = 0 -9 - pF Co(tr) (2) 2. Co(tr) is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDS Equivalent capacitance energy related -6 - pF Rg Gate input resistance f=1 MHz open drain - 10 - Ω Qg Total gate charge VDD = 480 V, ID = 1.2 A, VGS = 10 V (see Figure 16) -9.5 - nC Qgs Gate-source charge - 1.5 - nC Qgd Gate-drain charge - 6.5 - nC |
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