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STP2N105K5 Datasheet(PDF) 3 Page - STMicroelectronics |
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STP2N105K5 Datasheet(HTML) 3 Page - STMicroelectronics |
3 / 21 page DocID026321 Rev 3 3/21 STD2N105K5, STP2N105K5, STU2N105K5 Electrical ratings 21 1 Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit VGS Gate- source voltage ±30 V ID Drain current (continuous) at TC = 25 °C 1.5 A ID Drain current (continuous) at TC = 100 °C 0.95 A IDM (1) 1. Pulse width limited by safe operating area. Drain current (pulsed) 6 A PTOT Total dissipation at TC = 25 °C 60 W IAR Max current during repetitive or single pulse avalanche 0.5 A EAS Single pulse avalanche energy (starting TJ = 25 °C, ID=0.5 A, VDD= 50 V) 90 mJ dv/dt (2) 2. ISD ≤ 1.5 A, di/dt ≤ 100 A/µs, VDS(peak) ≤ V(BR)DSS. Peak diode recovery voltage slope 4.5 V/ns dv/dt(3) 3. VDS ≤ 840 V MOSFET dv/dt ruggedness 50 V/ns Tj Tstg Operating junction temperature Storage temperature -55 to 150 °C Table 3. Thermal data Symbol Parameter Value Unit Rthj-case Thermal resistance junction-case max 2.08 °C/W Rthj-amb Thermal resistance junction-ambient max 62.50 °C/W |
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