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STD13N60DM2 Datasheet(PDF) 1 Page - STMicroelectronics |
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STD13N60DM2 Datasheet(HTML) 1 Page - STMicroelectronics |
1 / 16 page December 2016 DocID029209 Rev 2 1/16 This is information on a product in full production. www.st.com STD13N60DM2 N- channel 600 V, 0.310 Ω typ., 11 A MDmesh™ DM2 Power MOSFET in a DPAK package Datasheet - production data Figure 1: Internal schematic diagram Features Order code VDS RDS(on) max. ID STD13N60DM2 600 V 0.365 Ω 11 A Fast-recovery body diode Extremely low gate charge and input capacitance Low on-resistance 100% avalanche tested Extremely high dv/dt ruggedness Zener-protected Applications Switching applications Description This high voltage N-channel Power MOSFET is part of the MDmesh™ DM2 fast recovery diode series. It offers very low recovery charge (Qrr) and time (trr) combined with low RDS(on), rendering it suitable for the most demanding high efficiency converters and ideal for bridge topologies and ZVS phase-shift converters. Table 1: Device summary Order code Marking Package Packing STD13N60DM2 13N60DM2 DPAK Tape and reel |
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