STD13N60DM2

Electrical characteristics

DocID029209 Rev 2

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Table 8: Source-drain diode

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Source-drain current

-

11

A

Source-drain current

(pulsed)

-

44

A

VSD(2)

Forward on voltage

-

1.6

V

Reverse recovery time

circuit for inductive load

switching and diode recovery

times")

-

90

ns

Reverse recovery

charge

-

252

nC

Reverse recovery

current

-

5.6

A

Reverse recovery time

Figure 16: "Test circuit for

inductive load switching and

diode recovery times")

-

170

ns

Reverse recovery

charge

-

667

nC

Reverse recovery

current

-

8.6

A

Notes:

Table 9: Gate-source Zener diode

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Gate-source breakdown voltage

±30

-

-

V

The built-in back-to-back Zener diodes are specifically designed to enhance the ESD

performance of the device. The Zener voltage facilitates efficient and cost-effective device

integrity protection, thus eliminating the need for additional external componentry.