STD36P4LLF6 datasheet(1/16 Pages) STMICROELECTRONICS

Part #	STD36P4LLF6

Description	P-channel 40 V, 0.0175 廓 typ.,36 A, STripFET??F6 Power MOSFET in a DPAK package

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March 2015

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This is information on a product in full production.

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STD36P4LLF6

P-

channel 40 V, 0.0175 Ω typ.,36 A, STripFET™ F6

Power MOSFET in a DPAK package

Datasheet - production data

Figure 1: Internal schematic diagram

Features

Order code

VDS

RDS(on) max.

ID

PTOT

STD36P4LLF6

40 V

0.0205 Ω

36 A

60 W

•

Very low on-resistance

•

Very low gate charge

•

High avalanche ruggedness

•

Low gate drive power loss

Applications

•

Switching applications

Description

This device is a P-channel Power MOSFET

developed using the STripFET™ F6 technology,

with a new trench gate structure. The resulting

Power MOSFET exhibits very low RDS(on) in all

packages.

For the P-channel Power MOSFET, current

polarity of voltages and current have to be

reversed.

Table 1: Device summary

Order code

Marking

Package

Packaging

STD36P4LLF6

36P4LLF6

DPAK

Tape and reel

AM11258v1

D(2, TAB)

S(3)

G(1)

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