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STDLED625H Datasheet(PDF) 3 Page - STMicroelectronics

Part # STDLED625H
Description  Gate charge minimized
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STDLED625H Datasheet(HTML) 3 Page - STMicroelectronics

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DocID024435 Rev 1
3/17
STDLED625H
Electrical ratings
1
Electrical ratings
Table 2. Absolute maximum ratings
Symbol
Parameter
Value
Unit
VDS
Drain-source voltage
620
V
VGS
Gate- source voltage
± 30
V
ID
Drain current (continuous) at TC = 25 °C
4.5
A
ID
Drain current (continuous) at TC = 100 °C
2.3
A
IDM
(1)
1.
Pulse width limited by safe operating area.
Drain current (pulsed)
18.0
A
PTOT
Total dissipation at TC = 25 °C
70
W
IAR
Avalanche current, repetitive or not-
repetitive (pulse width limited by Tj max)
3.8
A
EAS
Single pulse avalanche energy
(starting Tj = 25°C, ID = IAR, VDD = 50V)
115
mJ
VESD(G-S)
Gate source ESD(HBM-C = 100 pF,
R = 1.5 k
Ω)
2500
V
dv/dt (2)
2.
ISD ≤ 3.8 A, di/dt = 400 A/µs, VDD = 80% V(BR)DSS, VDS peak ≤ V(BR)DSS.
Peak diode recovery voltage slope
12
V/ns
VISO
Insulation withstand voltage (RMS) from
all three leads to external heat sink
(t = 1 s; TC = 25 °C)
V
Tstg
Storage temperature
- 55 to 150
°C
Tj
Max. operating junction temperature
150
°C
Table 3. Thermal data
Symbol
Parameter
Value
Unit
Rthj-case Thermal resistance junction-case max
1.79
°C/W
Rthj-pcb
(1)
1.
When mounted on 1inch² FR-4 board, 2 oz Cu.
Thermal resistance junction-pcb max
50
°C/W
Obsolete
Product(s)
- Obsolete
Product(s)


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