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STF10N60M2 Datasheet(PDF) 7 Page - STMicroelectronics |
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STF10N60M2 Datasheet(HTML) 7 Page - STMicroelectronics |
7 / 13 page STF10N60M2 Electrical characteristics DocID024712 Rev 4 7/13 Figure 8: Capacitance variations Figure 9: Normalized gate threshold voltage vs temperature Figure 10: Normalized on-resistance vs temperature Figure 11: Normalized V(BR)DSS vs temperature Figure 12: Source-drain diode forward characteristics Figure 13: Output capacitance stored energy VGS(th) 0.8 0.7 TJ(°C) (norm) -50 0.9 -25 50 100 0 25 75 125 1.0 1.1 ID=250 µA RDS(on) 1.3 1.1 0.9 0.7 TJ(°C) (norm) 0.5 -50 -25 0 25 ID=6.5 A 50 75 100 125 1.5 1.7 1.9 2.1 2.3 2.5 VGS=10V AM15829v1 VSD 0 2 ISD(A) (V) 1 5 3 4 0 0.2 0.4 0.6 TJ=-50°C TJ=150°C TJ=25°C 0.8 6 7 1 1.2 1.4 AM15830v1 |
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