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STF12N60M2 Datasheet(PDF) 5 Page - STMicroelectronics |
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STF12N60M2 Datasheet(HTML) 5 Page - STMicroelectronics |
5 / 13 page STF12N60M2 Electrical characteristics DocID027908 Rev 1 5/13 Table 8: Source-drain diode Symbol Parameter Test conditions Min. Typ. Max. Unit ISD Source-drain current - 9 A ISDM (1) Source-drain current (pulsed) - 36 A VSD (2) Forward on voltage VGS = 0 V, ISD = 9 A - 1.6 V trr Reverse recovery time ISD = 9 A, di/dt = 100 A/µs, VDD = 60 V (see Figure 16: "Test circuit for inductive load switching and diode recovery times") - 284 ns Qrr Reverse recovery charge - 2.4 µC IRRM Reverse recovery current - 20.5 A trr Reverse recovery time ISD = 9 A, di/dt = 100 A/µs, VDD = 60 V, Tj = 150 °C (see Figure 16: "Test circuit for inductive load switching and diode recovery times") - 454 ns Qrr Reverse recovery charge - 4.8 µC IRRM Reverse recovery current - 21 A Notes: (1) Pulse width is limited by safe operating area. (2) Pulse test: pulse duration = 300 µs, duty cycle 1.5%. |
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