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STF12N65M2 Datasheet(PDF) 5 Page - STMicroelectronics |
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STF12N65M2 Datasheet(HTML) 5 Page - STMicroelectronics |
5 / 13 page DocID027318 Rev 2 5/13 STF12N65M2 Electrical characteristics 13 Table 7. Switching times Symbol Parameter Test conditions Min. Typ. Max. Unit td(on) Turn-on delay time VDD = 325 V, ID = 4 A, RG = 4.7 Ω, VGS = 10 V (see Figure 14 and 19) -9 - ns tr Rise time - 7 - ns td(off) Turn-off delay time - 34 - ns tf Fall time - 13.5 - ns Table 8. Source drain diode Symbol Parameter Test conditions Min. Typ. Max. Unit ISD Source-drain current - 8 A ISDM (1) 1. Pulse width limited by safe operating area Source-drain current (pulsed) - 32 A VSD (2) 2. Pulsed: pulse duration = 300 µs, duty cycle 1.5% Forward on voltage VGS = 0, ISD = 8 A - 1.6 V trr Reverse recovery time ISD = 8 A, di/dt = 100 A/µs VDD = 60 V (see Figure 16) -313 ns Qrr Reverse recovery charge - 2.7 µC IRRM Reverse recovery current - 17 A trr Reverse recovery time ISD = 8 A, di/dt = 100 A/µs VDD = 60 V, Tj=150 °C (see Figure 16) -462 ns Qrr Reverse recovery charge - 4.1 µC IRRM Reverse recovery current - 17.5 A |
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